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IMEC
13 atoms · 跨 5 天 · 首见 2026-04-16 · 最近 2026-06-19
三色: 🟦 fact 13 · 🟥 take 0 · stance ▲0/▼0/◆0
来源: X 13
时态: fresh:13
标签: 好数字:9 · 好信源:3 · 好观点:1
叙事 (narrative) (1)
- 2026-06-19 · 提议建设
VON DER LEYEN SAYS NEED OTHER CORRIDORS IN MIDEAST, INCL. IMEC
tags: 好观点 · → daily
value: direction=其他走廊
事实 (fact) (12)
- 2026-05-28 · wafer-to-wafer hybrid bonding interconnect pitch
Imec and EV Group demonstrate wafer-to-wafer hybrid bonding with 200nm interconnect pitch
tags: 好数字 · → daily
value: qty=200nm
- 2026-05-28 · overlay accuracy claim
and record high overlay accuracy
tags: 好数字 · → daily
value: qty=record high
- 2026-05-27 · 2026–2041 半导体路线图
IMEC 2026–2041 Semiconductor Roadmap
tags: 好信源 · → daily
- 2026-05-27 · N2 节点时间
Nodes advance from N2 (2026) through A14 (2028), A10 (2031), A7 (2033), A5 (2036), A3 (2038) to A2 (2041)
tags: 好数字 · → daily
value: date=2026
- 2026-05-27 · A14 节点时间
Nodes advance from N2 (2026) through A14 (2028), A10 (2031), A7 (2033), A5 (2036), A3 (2038) to A2 (2041)
tags: 好数字 · → daily
value: date=2028
- 2026-05-27 · A2 节点时间
Nodes advance from N2 (2026) through A14 (2028), A10 (2031), A7 (2033), A5 (2036), A3 (2038) to A2 (2041)
tags: 好数字 · → daily
value: date=2041
- 2026-05-27 · 0.75 NA Hyper-NA EUV 光刻时间
Lithography: Progresses from 0.33 NA EUV (2026) to 0.55 NA High-NA (2028) and 0.75 NA Hyper-NA (2038)
tags: 好数字 · → daily
value: date=2038
- 2026-05-27 · CPP 从 48nm 缩至 39nm
CPP Scaling: Contacted Poly Pitch shrinks from 48 nm to 39 nm, enabling continued density gains.
tags: 好数字 · → daily
- 2026-05-27 · 嵌入式内存密度从 ~40 Mb/mm² 提升至 ~300 Mb/mm²
Embedded Memory: Density rises from ~40 Mb/mm² to ~300 Mb/mm²
tags: 好数字 · → daily
- 2026-05-27 · 嵌入式内存带宽从 0.01 TBps/mm² 提升至 2 TBps/mm²
bandwidth increases from 0.01 TBps/mm² to 2 TBps/mm² via silicon interposers, eRAM, photonics, and integrated voltage regulation.
tags: 好数字 · → daily
- 2026-05-20 · 声明内容
IMECの主張。10年で10倍としている。
tags: 好信源 · → daily
value: qty=10倍 · date=10年
- 2026-04-16 · 将在IMW 2026上讨论3D CCD DRAM
At IMW this year, host IMEC will discuss its 3D charge-coupled device-based DRAM, essentially making use of the 3D NAND architecture.
tags: 好信源 · → daily
时间轴 (近 20)
- 2026-06-19 ·
narrative · 提议建设 · → daily
- 2026-05-28 ·
fact · wafer-to-wafer hybrid bonding interconnect pitch · → daily
- 2026-05-28 ·
fact · overlay accuracy claim · → daily
- 2026-05-27 ·
fact · 2026–2041 半导体路线图 · → daily
- 2026-05-27 ·
fact · N2 节点时间 · → daily
- 2026-05-27 ·
fact · A14 节点时间 · → daily
- 2026-05-27 ·
fact · A2 节点时间 · → daily
- 2026-05-27 ·
fact · 0.75 NA Hyper-NA EUV 光刻时间 · → daily
- 2026-05-27 ·
fact · CPP 从 48nm 缩至 39nm · → daily
- 2026-05-27 ·
fact · 嵌入式内存密度从 ~40 Mb/mm² 提升至 ~300 Mb/mm² · → daily
- 2026-05-27 ·
fact · 嵌入式内存带宽从 0.01 TBps/mm² 提升至 2 TBps/mm² · → daily
- 2026-05-20 ·
fact · 声明内容 · → daily
- 2026-04-16 ·
fact · 将在IMW 2026上讨论3D CCD DRAM · → daily
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